Ram Murti Rawat, Vinod Kumar, "A Comparative Study of 6T and 8T SRAM Cell With Improved Read and Write Margins in 130 nm CMOS Technology," WSEAS Transactions on Circuits and Systems, vol. 19, pp. 13-18, 2020, DOI:10.37394/23201.2020.19.2
Ram Murti Rawat, Vinod Kumar. A Comparative Study of 6T and 8T SRAM Cell With Improved Read and Write Margins in 130 nm CMOS Technology.
WSEAS Transactions on Circuits and Systems. 2020;19:13-18. 10.37394/23201.2020.19.2
WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 19, 2020
A Comparative Study of 6T and 8T SRAM Cell With Improved Read and Write Margins in 130 nm CMOS Technology
Authors: ,
Abstract: This paper examines the factors that affect the Static Noise Margin (SNM) of a Static Random Access memories which focus on optimizing Read and Write operation of 8T SRAM cell which is better than 6T SRAM cell Using Swing Restoration for Dual Node Voltage. The read and Write time and improve Stability. New 8T SRAM technique on the circuit or architecture level is required. In this paper Comparative Analysis of 6T and 8T SRAM Cells with Improved Read and Write Margin is done for 130 nm Technology with Cadence Virtuoso schematics Tool.
Pages: 13-18 WSEAS Transactions on Circuits and Systems, ISSN / E-ISSN: 1109-2734 / 2224-266X, Volume 19, 2020, Art. #2 DOI: 10.37394/23201.2020.19.2
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