WSEAS Transactions on Electronics
Print ISSN: 1109-9445, E-ISSN: 2415-1513
Volume 17, 2026
Porous Silicon-Integrated Germanium Quantum Dots for Advanced Radiation Detector Applications
Authors: , ,
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Abstract: The porous silicon and the porous silicon doped with germanium (Ge) powder were prepared electrochemically, inspired by the mentioned parameters. The proportion of Hydrogen fluoride (HF) to ethanol was 4:1. Field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectroscopy (EDX) were used to characterize the sample structure, and it was observed that Ge is present in the sample. We studied the sample current-voltage (I-V) characteristics to observe at which bias voltage on the source the measured current is increasing. Furthermore, fully utilizing the readout capabilities, pulses of X-rays were successfully measured and compared in the investigation of different parameters of X-ray illumination on the sample detector. The porous silicon (PS) and Ge -PS parameters that yield the best results are (90V, 100mA, 1s) and (100V, 10mA, 0.5s).
Pages: 22-36
DOI: 10.37394/232017.2026.17.3