WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 22, 2023
Analysis and Design of MBCFET and Their Circuit Application in Current Mirror and DRAM
Authors: , ,
Abstract: This research paper addresses the challenges associated with transistor downscaling, particularly
short channel effects (SCEs) in conventional silicon metal-oxide-semiconductor field-effect transistors (Si
MOSFETs), and introduces Multi-Bridge-Channel MOSFETs (MBCFETs) as a potential solution. This study
explores their attributes, emphasizing flexibility and faster switching, and comprehensively examines device
parameters, fabrication processes, and simulation frameworks, offering a detailed analysis of critical factors
influencing MBCFET performance. Investigating the intricate relationship between nanosheet dimensions and
device characteristics, the research provides insights for optimized design and integration into future
semiconductor technologies. The research looks at how the gate electrode's work function, the nanosheets'
thickness and count, and the different types of doping affect important device properties such as
transconductance, drive current, OFF-state current, and threshold voltage. Furthermore, the study is being
carried out to form a current mirror and DRAM circuit by using the proposed MBCFET. This study
demonstrates the transformative potential of MBCFETs in high-performance electronic applications.
Search Articles
Pages: 309-315
DOI: 10.37394/23201.2023.22.31