WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 18, 2019
Measurement Method for the Dynamic On-State Resistance of GaN Semiconductors
Authors: ,
Abstract: Defects in material structure effects the ON-state resistance of GaN devices, which can’t be considered constant in power loss evaluation when considering high operating frequency. The aim of this article is to propose a novel method to measure the dynamic RDSon. The method resolves a typical disadvantage of former methods e.g. an unclear clamping diode voltage drop in former approaches. Test results obtained with the new method are presented for 3 samples provided by different suppliers. Results shows that each sample exhibits a different dynamic RDSon characteristics what indicates a different process technology used to manufacture the device.
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Keywords: GaN semiconductor, Novel RDSon Measurement method, Dynamic On state resistance, Dynamic RDSon
Pages: 50-54
WSEAS Transactions on Circuits and Systems, ISSN / E-ISSN: 1109-2734 / 2224-266X, Volume 18, 2019, Art. #9