WSEAS Transactions on Electronics
Print ISSN: 1109-9445, E-ISSN: 2415-1513
Volume 13, 2022
Electrical Properties of CdFeSe, CdMnTe Epitaxial Films
Authors: , , ,
Abstract: Optimal conditions of obtaining perfect $$ Cd_{1–x}Fe_{x}Se (x<0.08) $$ and $$Cd_{1-x}Mn_{x}Te (x=0.15)$$ epitaxial films are defined. The electrical properties of $$ Cd_{1–x}Fe_{x}Se (x<0.08) $$ and $$ Cd_{1-x}Mn_{x}Te (x=0.15)$$ epitaxial films have been studied at room temperature. It was defined that $$ Cd_{1–x}Fe_{x}Se $$ semimagnetic semiconductor epitaxial films are of n-type and $$Cd_{1-x}Mn_{x}Te$$ p-type. Electrical resistivity was defined 14.4 ·107 Ohm⋅cm. The effect of γ-irradiation on VAC of $$Cd_{1-x}Mn_{x}Te$$ epitaxial films is studied at doses Dγ ≤ 1.5 кGy.