WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 11, 2012
Modelling of Characteristic Parameters for Asymmetric DHDMG Mosfet
Authors: , ,
Abstract: A quasi-Fermi potential based analytical subthreshold drain current model for linear profile based DHDMG MOS transistor, incorporating the fringing fields at the two ends of the device, without the use of any fitting parameter as is the case with drift-diffusion approach is proposed. The model uses an average doping concentration expression. A pseudo-2D analysis applying Gauss’ law along the surface is used to model the subthreshold surface potential. The same model is used to find the threshold voltage and drain current for Gaussian profile based DHDMG. A detailed comparison of the proposed Gaussian model with the previously proposed linear model is also presented. The proposed model is also compared with Double gate MOSFET and better performance in terms of DIBL effect reduction is observed. The results obtained are compared with a 2D device simulator DESSIS. Very good agreement of the results from DESSIS with those from the proposed model validates the model for suppressing the short channel effects.