WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 12, 2013
Novel Comprehensive Analytical Probabilistic Models of The Random Variations in MOSFET’s High Frequency Performances
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Abstract: In this research, the probabilistic models of the random variations in MOSFET’s high frequency performance defined in terms of variations in gate capacitance and transition frequency, have been proposed. Both random dopant fluctuation and process variation effects which are the major causes of the MOSFET’s high frequency characteristic variations have been taken into account. The short channel MOSFET has been focused. The proposed models which take the form of the comprehensive analytical expressions have been derived by using the alpha-power law which is more comprehensive than the conventional square law. The up to dated physical level fluctuation model has been adopted as the basis instead of the classical one. So, the model of gate capacitance variation has been refined. These probabilistic models have been verified based on the IBM 90nm RF CMOS technology by using the Monte-Carlo SPICE simulations and the Kolmogorov- Smirnof goodness of fit tests. They are very accurate since they can fit the Monte-Carlo SPICE based data and distributions with 99% confidence. Hence, the proposed models have been found to be the potential mathematical tool for the statistical/variability aware analysis /design of various MOSFET based high frequency applications.
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Keywords: Gate capacitance, High frequency, MOSFET, Short channel, Statistical design, Transition frequency, Variability aware design