WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 12, 2013
Novel Powerful Comprehensive Analytical Probabilistic Model of Random Variation in Subthreshold MOSFET’s Performance
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Abstract: In this research, the novel comprehensive probabilistic analytical model of the subthreshold MOSFET’s performance affected by both random dopant fluctuation and process variation effects has been proposed. The up to dated Takeuchi’s physical level random variation model has been adopted. The proposed model has been found to be analytic, powerful and comprehensive as it has been derived by using the subthreshold MOSFET’s physical equation without any approximation. This model has been verified at the nanometer level i.e. 65 nm CMOS process, by using the BSIM4 based Monte-Carlo simulations. The verifications have been performed based on both NMOS and PMOS technologies. This model is very accurate since it can closely follow the Monte-Carlo based distributions with pleasant goodness of fit test results. Furthermore, the proposed model can also serve as the basis for the mismatch modeling and performance optimization. Hence, the proposed model has been found to be the potential mathematical tool for the statistical/variability aware analysis/design of various subthreshold region operated MOSFET based low voltage/low power.
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Keywords: Drain current, low power, low voltage, nanometer level, MOSFET, statistical design, subthreshold, variability aware design