WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 13, 2014
Diagnosis of Resistive-Open Defects Using IDDT in Digital CMOS Circuits
Authors: , ,
Abstract: A resistive-open defect is an imperfect circuit connection that can be modeled as a defect resistor between two circuit nodes that should be connected. Resistive-open defects will not cause function fault immediately, but it will cause the delay fault, and cannot use the method of voltage to survey. In this paper, we propose a test method of transient power supply current (IDDT) for resistive open faults, and use wavelet analysis to location the fault. The experimental results show that the effectiveness of IDDT methods uses the RMS values of the wavelet transforms of the transient power supply or ground currents. The delay faults test process to be very effective in all cases.
Search Articles
Keywords: Resistive-open defects, Transient power supply current (IDDT), Digital circuit, Wavelet analysis
Pages: 296-300
WSEAS Transactions on Circuits and Systems, ISSN / E-ISSN: 1109-2734 / 2224-266X, Volume 13, 2014, Art. #33