WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 13, 2014
Role of the Threshold Voltage and Transconductance Parameters of NMOS Transistors in NMOS Inverter Performance for Static and Switching Conditions of Operation
Authors: , , ,
Abstract: The aim of this paper is to show the influence of the threshold voltage and transconductance parameters that characterize the NMOS transistors on the behavior of NMOS inverters in static and switching conditions of operation, as well as set directive that should be followed during the design phase of NMOS inverters that enable designers to design NMOS inverters with the best possible performance, depending on operation conditions. Designing the NMOS inverters with controlled parameters that characterize NMOS transistors in NMOS inverters also enables designers to design the logic circuits based in NMOS inverters (NMOS logic) with the best possible performance, according to the operation conditions and designers’ requirements.
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Keywords: NMOS inverter, NMOS transistor, VTC characteristics, threshold voltage, critical voltages, noise margins, NMOS transconductance parameter, propagation delay times
Pages: 1-10
WSEAS Transactions on Circuits and Systems, ISSN / E-ISSN: 1109-2734 / 2224-266X, Volume 13, 2014, Art. #1