WSEAS Transactions on Electronics
Print ISSN: 1109-9445, E-ISSN: 2415-1513
Volume 12, 2021
Ferromagnetic Schottky Contact for GaN Based Spin Devices
Author:
Abstract: In this paper, ferromagnetic Schottky contacts for GaN based spin injection are being studied. The electrical characterization of this Co/n-GaN and Fe/n-GaN Schottky contacts showing the zero-bias barrier height comes closer to unity as the temperature is increased. Also, the Richardson constant is extracted for this Schottky contact. Both the zero-bias barrier height and the Richardson constant are verified both experimentally as well as theoretically. Thus, this Schottky contacts will serve as spin injector for GaN based spin devices specifically for GaCrN based devices