WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 14, 2015
3.67GHz High-Linearity Low Noise Amplifier with Simple Topology
Authors: ,
Abstract: This paper describes the design, implementation, and test of a 3.67GHz low noise amplifier (LNA) for intermediate frequency amplifier using pseudomorphic high electron mobility transistor (pHEMT). The LNA circuit is optimized and simulated using Advanced Designed System (ADS). The layout of the amplifier is processed using Protel 99SE. The simulation results show that the gain and noise figure (NF) are 13.535dB and 1.47dB with an output 3rd order intercept point (OIP3) of 37.441dBm, while input and output voltage standing wave ratios(VSWRs) are 1.539 and 1.394, respectively. The tendencies of measured gain, NF, and VSWRs are in a good agreement with those of simulated ones. The fabricated LNA, with a degraded NF below 1.718dB, achieves 13.16dB gain similar to the simulated result. The LNA provides higher than simulations but reasonably acceptable input and output VSWRs of 1.539 and 1.710. The measured OIP3 and output 1dB compression point are better than 33.25dBm and 19.4dBm, respectively.
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Pages: 215-219
WSEAS Transactions on Circuits and Systems, ISSN / E-ISSN: 1109-2734 / 2224-266X, Volume 14, 2015, Art. #25