WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 14, 2015
Analysis of DAR IMPATT Diode for Some Frequency Bands
Authors: , , , ,
Abstract: The analysis of DAR IMPATT diodes has been realized on basis of the precise drift-diffusion nonlinear model. The admittance characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz. The energy characteristics have been optimized for the second high frequency band near the 220 GHz.