Strained Nanoscale GeSiSn Layers Grown on Silicon for Optoelectronic

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Abstract: The formation of pseudomorphous GeSiSn layers directly on Si have been investigated. The transition from two-dimensional growth regime to three-dimensional of the GeSiSn film on Si(100) was studied for different mismatch with silicon and growth temperatures. A possibility of synthesizing multilayer structures by molecular beam epitaxy was shown, and the crystal lattice constants using the high-resolution transmission electron microscopy and X-ray diffractometry were determined. Based on multilayer GeSiSn/Si structures the p-i-n-diodes, which demonstrated the photoresponse increasing by several orders of magnitude compared to the Sn-free structures at an increase in the Sn content, were created. Nanostructures based on GeSiSn layers have demonstrated the photoluminescence at 0.6 0.85 eV.

WSEAS Transactions on Electronics, ISSN / E-ISSN: 1109-9445 / 2415-1513, Volume 7, 2016, Art. #4

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Alexandr Nikiforov, Vyacheslav Timofeev, Artur Tuktamyshev, Andrew Yakimov, Vladimir Mashanov, Ivan Loshkarev, Anton Gutakovskii, Oleg Pchelyakov, Nataliya Baidakova, "Strained Nanoscale GeSiSn Layers Grown on Silicon for Optoelectronic," WSEAS Transactions on Electronics, vol. 7, pp. 26-31, 2016, DOI:
Alexandr Nikiforov, Vyacheslav Timofeev, Artur Tuktamyshev, Andrew Yakimov, Vladimir Mashanov, Ivan Loshkarev, Anton Gutakovskii, Oleg Pchelyakov, Nataliya Baidakova. Strained Nanoscale GeSiSn Layers Grown on Silicon for Optoelectronic. WSEAS Transactions on Electronics. 2016;7:26-31.
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