Low Voltage Low Power and High Speed OPAMP Design using High-K FinFET Device

Authors: ,

Abstract: In this paper, operational amplifier circuit is designed using model parameters of high-k FinFET in 22nm technology. The conventional design expressions for MOSFET based OPAMP design are fine tuned to design FinFET based OPAMP. The OPAMP design is suitable for use as sub circuit in ADC design as it supports low voltage, high speed and low power dissipation. The transistor geometries are identified so as to achieve high performance and energy efficient OPAMP. Schematic capture is carried out using Cadence tool. From the simulation studies, the designed OPAMP has a unity gain bandwidth of 100 GHz and slew rate is equal to 1V/µS. The maximum power dissipation of differential amplifier circuit is 800nW and hence suitable for all low power analog and digital circuits.

WSEAS Transactions on Circuits and Systems, ISSN / E-ISSN: 1109-2734 / 2224-266X, Volume 20, 2021, Art. #11

PDF
DOI
XML
Cite
×
Citation Tools
WSEAS AMA
Vasudeva G., Uma B. V., "Low Voltage Low Power and High Speed OPAMP Design using High-K FinFET Device," WSEAS Transactions on Circuits and Systems, vol. 20, pp. 80-87, 2021, DOI:10.37394/23201.2021.20.11
Vasudeva G., Uma B. V.. Low Voltage Low Power and High Speed OPAMP Design using High-K FinFET Device. WSEAS Transactions on Circuits and Systems. 2021;20:80-87. 10.37394/23201.2021.20.11
Copy to Clipboard
Citation copied to Clipboard

Certification

---