WSEAS Transactions on Circuits and Systems
Print ISSN: 1109-2734, E-ISSN: 2224-266X
Volume 18, 2019
A Transmission Gate based High Frequency Rectifier Designed using 45nm CMOS Process for RF Energy Harvesting Application
Authors: ,
Abstract: With the emergence of 5G communication there has been considerable emphasis on energy conservation and management along with the prevalent methods and designs. The requirement is to generate reliable and faster data transfer with energy management. Energy harvesting or more specifically RF energy harvesting is very significant for a modern communication system to achieve the self-sustainability of the network in terms of power. A high frequency rectifier is essentially the core of such a system. There are several challenges in the design of a rectifier at high frequency. The major challenge lies in enhancing the percentage conversion efficiency (PCE) for a low power signal which is limited by the leakage in the CMOS device. This paper presents a work related to high frequency rectifier design based on transmission gate (TG) for RF applications which achieves a PCE to 80% at -2dBm in its single stage realization and is highest in class efficiency as compared to reported literatures. The frequency response shows the performance over a wideband and it works in 953 MHz GSM band. Also this performance is achieved with minimal number of devices and with 110nW power dissipation.
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Pages: 44-49
WSEAS Transactions on Circuits and Systems, ISSN / E-ISSN: 1109-2734 / 2224-266X, Volume 18, 2019, Art. #8