WSEAS Transactions on Electronics
Print ISSN: 1109-9445, E-ISSN: 2415-1513
Volume 11, 2020
Preparation and Characterization of CdS/CdTe Device for Radiation Sensing
Authors: , , , ,
Abstract: everal Techniques had been applied to measure Ionizing Radiation. Majority of this techniques are costly and very complicated. We focus on this research to chemically deposition of CdS to form with CdTe junction x-ray sensor. CdTe has been electrodeposited onto CdS/FTO glass substrate to form with previously fabricated CdS layer 4 µm thickness. The optimum potential for CdTe deposition has been studied by potentiostat measurement, it shows that -1.3 is the optimum working potential. The XRD analysis showed that the CdTe films have highly oriented crystallites with the cubic phase zinc blend with preferred orientation (111). The band gap Eg extrapolated to be 1.4 eV. Four stacked sensors were connected in series to measure the device performance. It was observed that amplitude of the pulse formed due to exposed FTO/CdS/CdTe/Mo detector to X-ray of 33 keV and 1mA intensity is 1.03 V.
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Pages: 127-142
DOI: 10.37394/232017.2020.11.16