Design and Implementation of a High-Speed D Flip Flop using CMOS
Inverter Logic
JAYADEVA G. S., NIKHIL MURALI, MEGHANA S., RAKSHA K. KUMAR, NITHIN ANIL
NAIR
Deptartment of Electronics and Communication Engineering,
BMS Institute of Technology & Management,
Bangalore,
INDIA
Abstract— This paper proposes an improvised D- flip flop configuration based on tristate inverter logic, which
reduces the power dissipation, decrease the transition time from the input to output as well as reduced time to
reach rail to rail voltage. The flip flop uses transmission gate instead of pass transistor to achieve this
requirement. The design is simulated using 90nm CMOS technology and data is propagated at 50% duty cycle.
The circuit is simulated using Cadence tools to assess the performance with respect to delay and power. These
D-flip flops have numerous applications such as buffers, registers, digital VLSI clocking systems,
microprocessors etc.
Key-words— D Flip flop, Cadence, Power consumption, Propagation delay.
Received: June 17, 2021. Revised: October 8, 2022. Accepted: November 11, 2022. Published: December 19, 2022.
1 Introduction
In the field of Very Large Scale Integrated
(VLSI) circuits, sequential circuits are
expansively used and serve a vital role in digital
logic design. The purpose of recent circuit
designs is to retain or improve the
characteristics feature necessary for VLSI
industry, while reducing power consumption.
There are two major types of power dissipation
viz, static and dynamic. The dynamic power
dissipation is mainly due to switching activity
of the load capacitor. Internal leakage is
caused in devices when it is not in the
working condition which constitutes the static
dissipation [6], [7].
Various attempts have been made to reduce
power dissipation using different
technologies, with different topologies.
Specifically, the dynamic power. Among them
CMOS technology with single edge triggering
flip-flop topology is popular [1], [2]. Further the
devices kept on scaling to reduce individual
device power dissipation. At the same time the
density of components in a chip increases to
accommodate more functionality, which
increased the power dissipation in a given
chip area.
The CMOS Technology node, in which
we essentially deal with the physical dimensions of
the device can accommodate more transistors in
the given area and also can switch faster and
consume less power compared with other
technologies,
hence require less energy and the chip runs at
lower temperature.
The power dissipation and time delay
variations depend on various parameters such
as supply voltage, aspect ratio, oxide
thickness, load capacitance, threshold voltage,
which vary as the technology scales down.
In a given CMOS circuit power dissipation can
be from three main sources. Namely, Signal
transition, short circuit current flowing from
supply to the ground terminal, and leakage
currents. The short circuit power becomes
comparable to the dynamic power dissipation as
the technology is scaled down. Furthermore, the
leakage power also plays a hugely important role
in a digital CMOS circuit. As we further
reduce the channel length, gate oxide
thickness and threshold voltage in CMOS
circuits, the significant contributor to power
dissipation turns out to be the high leakage
current [3], [4], [5]. Therefore, to estimate and
reduce leakage power, relevant modelling and
accurate identification of different leakage
components is principally important in
high-speed and low-power applications. The
load capacitance is reduced from 10fF to 1fF to
reduce switching capacitance and power
dissipation.
CMOS technologies can be used to
describe various systems in which CMOS flip-
flops are extensively used such as personal
computers, servers, other portable systems etc.
WSEAS TRANSACTIONS on ELECTRONICS
DOI: 10.37394/232017.2022.13.16
Jayadeva G. S., Nikhil Murali,
Meghana S., Raksha K. Kumar, Nithin Anil Nair