c3dfd3ad-7f73-4c81-9221-300f5d50236e20230127034807874wseas:wseasmdt@crossref.orgMDT DepositInternational Journal of Electrical Engineering and Computer Science2769-250710.37394/232027https://wseas.com/journals/eeacs/index.php62920226292022410.37394/232027.2022.4https://wseas.com/journals/eeacs/2022.phpRezaAkbarpouraniDepartment of Electrical and Electronics Engineering, South Tehran Branch, Islamic Azad University, Shahid Deh-Haghi AVE, Fifth Bridge, Abouzar Blvd, Pirouzi AVE, Tehran, IranHassan Ghalami BavilOlyaeeDepartment of Physics, South Tehran Branch, Islamic Azad University, Shahid Deh-Haghi AVE, Fifth Bridge, Abouzar Blvd, Pirouzi AVE, Tehran, IranSeyed Alireza MousaviShiraziDepartment of Physics, South Tehran Branch, Islamic Azad University, Shahid Deh-Haghi AVE, Fifth Bridge, Abouzar Blvd, Pirouzi AVE, Tehran, IranIn this paper, through solving Poisson equations, a precise model for double-gates and dual-material carbon nanotube transistors is presented that is more comprehensive than the previous models. Thus, considering a double-gate transistor with a two-material gate, modeling and solving the Poisson equation are taken into consideration in two dimensions for a more accurate analysis of the inner potential of the channel. In this method, the inside electrostatic potential of the channel is obtained by summing two parts of the long channel potential. Also, the dependence of the inside load of the channel on its inside potential is considered in a way that gives a more accurate answer to the potential of the transistor. The potential is generally considered based on the sum of the one-dimensional potential in the channel (without any dependence on the surface potential) and the lateral potential changes in two dimensions. The charge in the Poisson relation is also considered to evaluate the dependence on the potential within the channel which provides a more complete analysis of the Poisson equation.12312022123120229610014https://wseas.com/journals/eeacs/2022/a28eeacs-013(2022).pdf10.37394/232027.2022.4.14https://wseas.com/journals/eeacs/2022/a28eeacs-013(2022).pdf10.1002/jnm.796Singh A.K., An analytical study of undoped symmetric double-gate MOSFET (SDG). Int. J. Numer. Model.: Electron. Netw. Devices Fields 24, 515-525 (2011). 10.1109/ted.2013.2273223Woo J.H, Choi J.M, Choi Y.K., Analytical Threshold Voltage Model of Junctionless Double-Gate MOSFETs with Localized Charges. IEEE Trans Electron Devices 60, 2951-2955 (2013). 10.1109/ted.2012.2202119Chiang T.K., A quasi-two-dimensional threshold voltage model for short-channel junctionless doublegate MOSFETs. IEEE Trans Electron Devices 59, 2284-2289 (2012). 10.1002/jnm.796Singh A.K., An analytical study of undoped symmetric double-gate MOSFET (SDG). International Journal of Numerical Modelling: Electronic Networks, Devices, and Fields 24, 515-525 (2011). 10.1088/1674-4926/32/4/044005Jin L, Hongxia L, Bo Y, et al., A two-dimensional analytical model of fully depleted asymmetrical dualmaterial gate double-gate strained-Si MOSFETs. J. Semicond 32, 044005-1-7 (2011). 10.1016/j.mee.2011.04.065Tsormpatzoglou A, Pappas I, Tassis D.H, et al., Analytical threshold voltage model for short-channel asymmetrical dual-gate material double-gate MOSFETs. Microelectron. Eng 90, 9-11 (2012). Tafakori P, Orouji A., Investigation of multiple material gate impact on short channel effects and reliability of nanoscale SOI MOSFETs. International Journal of Electrical and Computer Engineering 7. 128-131 (2013). 10.1109/soi.2002.1044404Subramaniam S, WALE R.N.A, JOSHI S.M., Drain current models for single-gate mosfets & undoped symmetric & asymmetric double-gate soi mosfets and quantum mechanical effects: a review. International Journal of Engineering Science and Technology 5. 96-105, 2013.