
takes Wafer from the Wafer slot, puts Wafer into CCD
Aligner, collects Wafer aligned after Wafer alignment, mea-
sures Wafer’s thin film thickness using Ellipsometer, and
proposes Wafer’s Examine system.
There are several processes in the semiconductor Wafer
process, and several studies are underway to manufacture
Wafers more efficiently for each process. [1] [2] [3]
To make as many normal chips as possible in one Wafer,
each process must be fully controlled, and accurate mea-
surement is essential for complete control. Metrology is the
exact measurement of the Wafer process as intended, and
Inspection is the inspection of whether the Wafer is defective
or the particle is separated, and the combination of these
two is called the MI (Measurement, Inspection) process. The
semiconductor process consists of a total of eight steps, and as
the measurement is carried out at the end of each process, the
MI process in the semiconductor process is very important.
Ellipsometry is a technology that uses interference or phase
difference between reflected light on a thin film surface and
reflected light from an interface under the thin film, and
changes due to the influence of the medium as light passes
through the medium. The change uses a property in which the
degree is proportional to the refractive index and thickness
of the thin film. The device for measuring this is referred to
as an Ellipsometer, and various methods for measuring thin
film thickness using the Ellipsometer are being studied. [4]
[5] [6] Ellipsometer measurement law is a non-destructive
test, and the advantage of measuring time is relatively short
to measure the sample, and it is relatively easy to measure
semiconductors. [7] Ellipsometry measures the polarization
variation of incident light and reflected light to determine the
thickness of the thin film and the complex refractive index,
and the thickness of the thin film can be measured from
the lowest number of angstroms to hundreds of micrometers.
These Ellipsometer technologies are currently being applied
in various fields, ranging from basic research such as physics,
electronics, and biology to industrial applications, and can be
applied to semiconductor measurement processes. Fig. 1 shows
a schematic diagram for measuring wafers using Ellipsometer.
Fig. 1. Schematic of Ellipsometer.
Fig. 2 is an overall configuration diagram of the CCD
Aligner. The CCD Aligner is operated using a vision system.
The method of measuring [8] using Vision Aligner for Wafer
allows the controller to rotate the chuck once when the wafer
is placed on the chuck of the aligner, at which point the
image profile of the wafer can be obtained from the CCD
circuit. After one turn, the chuck motor stops, and in this
case, the controller may obtain image data of the wafer from
the CCD circuit. Using these values, the eccentric amount of
the wafer and the direction of the fret or notch are calculated.
Thereafter, after going through an eccentric correction process
of matching the center of the chuck and the wafer, the direction
of the fret or notch is aligned in a predetermined direction.
As a result, the position of the visual marking marked on
the wafer is analyzed using a camera to check whether the
eccentricity of the wafer and the direction of the flat or notch
are accurately aligned. The amount of error is calculated based
on the measurement of the initial alignment result. Repeating
accuracy may be obtained by repeating such an operation more
than 2,000 times.
Fig. 2. CCD Aligner.
A thin film thickness measuring device using Ellipsometer,
which can be used in the MI process of semiconductor Wafer,
was designed.
By interlocking the WTR(Wafer Transfer Robot) and CCD
Aligner with the existing Ellipsometer equipment, WTR scans
the Wafer to be inspected in the Wafer slot and puts it into the
CCD Aligner. The injected Wafer is aligned by CCD aligner
by Wafer Aligner. The aligned Wafer is recovered by the WTR
again and the recovered Wafer is put into the Ellipsometer. The
injected Wafer has a structure in which the thickness of a thin
film is measured using an Ellipsometer.
Fig. 3 shows the overall structure of the proposed system.
The WTR is located between the Wafer case and the Wafer
Aligner, and the Ellipsometer System is located in the center,
combined with each other, and interlocked.
Fig. 4 shows the overall flow of the Ellipsometer system.
Determine whether to place the Wafer on the Wafer Stage
2. Related Work
2.1 M, (Measurement, Inspection)
2.2 Ellipsometer
2.3 CCD Aligner
3. Align Inspection System for Ellipsometer
3.1 System Design
3.2 Operation Procedures of Ellipsometer Inspection
DESIGN, CONSTRUCTION, MAINTENANCE
DOI: 10.37394/232022.2023.3.12
Jae-Sung Kim, Jongpil Jeong,
Chae-Gyu Lee, Tae-Yong Kim,
Yongju Na, Se-Hyeon Ryu