Silicon Carbide Films as Protective and Optical Coatings
KRUPA M.M.
Institute of Magnetism of National Academy of Science of Ukraine,
03143 Kiev, Vernadsky's bul.,36,
UKRAINE
Abstract: - The paper presents the results of experimental studies of amorphous silicon carbide films
as a material for applying protective coatings, as well as for creating a submicron structure on the
surface of optical elements by the method of cutting the film with laser radiation. The technology for
obtaining amorphous SiC films is described. The degradation time of the film cutting of the TbFe film
with the cutting protective coatings was measured and it was shown that amorphous SiC films provide
more effective protection of TbFe films from oxidation compared to SiO2 films.
Key-Words: - amorphous silicon carbide films, protective coatings, laser technology for forming a
submicron structure in films
Received: March 16, 2024. Revised: August 9, 2024. Accepted: September 14, 2024. Published: November 14, 2024.
1. Introduction
Silicon carbide films are considered mainly as a
promising material for use in solar cells and in the
development of new microelectronic elements based
on silicon. The best results in such developments are
obtained when using single-crystal SiC films, which
complicates the technology of their manufacture.
However, the high technical characteristics of SiC,
such as high mechanical strength, hardness, thermal
and chemical stability, good thermal conductivity at
high values of electrical resistance, as well as a large
value of the refractive index and transparency in a
wide spectral region allow us to consider silicon
carbide films as a good material for protective and
optical coatings. An important fact is that SiC films
sublimate at high temperatures, bypassing the melt
stage, which allows them to be used for the
manufacture of flat optical elements with a given
submicron structure using powerful laser radiation.
This paper presents the results of experimental
studies of amorphous silicon carbide films as a
material for applying protective coatings, as well as
for creating submicron.
2. Research methods
Silicon carbide films are obtained by molecular
beam and gas transport epitaxy methods, by
cathodic and ion sputtering methods, as well as by
various electrochemical deposition methods. In our
work, SiC films were produced by magnetron or ion
beam sputtering on glass substrates or on fused
quartz substrates. A feature of our technology is that
as sputtering targets we used highly dispersed
(d=2030 microns) silicon carbide powder, in
which each SiC crystallite was enriched with
silicon. Enrichment with silicon (about 5%) was
carried out at the stage of obtaining the silicon
carbide compound. The technology we used allowed
us to obtain amorphous films with high strength and
hardness indicators with good adhesion of the film
to the substrate. The amorphous structure of the
films is confirmed by electron diffraction.
In the work SiC films with a thickness of 20 nm
to 120 nm were studied. Measurements of the
optical characteristics of the films showed that our
films have high transparency in the wavelength
range
= 0,5 - 1 μm and their refractive index
n>2.5.
When determining the characteristics of SiC
films as a protective coating, we used the
accelerated aging method [1]. This method is based
on the statement that any degradation process
depends on temperature and is described by a
certain activation potential. To assess the
effectiveness of SiC films as a protective coating,
we measured the degradation times of amorphous
ferrimagnetic films with perpendicular anisotropy
TbFe when using a protective coating of different
materials. The choice of TbFe films is based not
only on the fact that these films are well studied as a
material for magneto-optical information recording
[2, 3], but also on the fact that terbium atoms
interact extremely strongly with oxygen atoms,
which causes strong oxidation of TbFe films in air.
It is known [2, 3] that a change in the relative
concentration of interacting Tb and Fe atoms in
amorphous ferrimagnetic TbFe films causes a
International Journal of Chemical Engineering and Materials
DOI: 10.37394/232031.2024.3.7
Krupa M. M.
E-ISSN: 2945-0519
55
Volume 3, 2024
significant change in the coercive force of the film
Hc (from Hc>106 A/m for the composition at the
compensation point Tb22Fe78 to Hc
5x104 A/m for
the composition Tb17Fe83). It should also be noted
that the value of Hc can be easily and accurately
controlled using magneto-optical measurement
methods.
We measured the change in the coercive force Hc
of the TbFe film after several hours of annealing at
different temperatures T (from T= 400 С to T= 1600
С) and, based on the measurement results,
determined the degradation time
H of TbFe films at
room temperature based on the following
expressions
0
( , ) ( )
()
H
l
H
t
kT
W
H t T H T e
H T H e



; (1)
where Н0 is the coercive force of the film at
temperature Т=0 К, WH is the activation potential of
the degradation process, k is the Boltzmann
constant,
H is the degradation time at temperature
T, t is time, l is a numerical coefficient close to
unity.
When developing a laser technology for forming
a submicron structure on the surface of large-area
optical parts, two tasks need to be solved. The first
of them is related to the development of a
technological process for forming such a submicron
structure under the action of laser radiation, and the
second is related to the development of a system for
moving a laser beam with nanoscale accuracy. We
studied the process of forming a submicron phase
structure in amorphous SiC films using a special
stand, the scheme of which is presented in Fig. 1.
.
Fig. 1. Scheme of the stand for forming
submicron structures in films by laser radiation: 1
argon laser, 2 acousto-optic modulator, electro-
optic modulator, 3 linear displacement motor
along the x coordinate, 4 micromotor with a
microlens, 5 substrate with film, 6 linear
displacement motor along the y coordinate, 7 laser
displacement meter, 8 photodetector, 9 computer
control unit.
The submicron structure is created by the
radiation of a continuous single-mode argon laser 1
with a power of 6 W, which is modulated by high-
frequency acousto-optic modulators 2 at a frequency
of 230 MHz and focused on the substrate with a film
by a microlens using an autofocus micromotor 4.
Continuous or stepwise movement of the laser beam
focusing point on the film surface is carried out by
two linear motors 5 and 6, which are installed on
high-precision aerostatic guides. The laser
displacement meter 7 allows you to control the
position of the laser beam focusing point on the
substrate in x and y coordinates with an accuracy of
up to 100 nm. The stand is controlled by a personal
computer 9. All optical-mechanical units of the
stand are installed on a vibration-insulated table.
Our stand provided focusing of the laser beam on
the film surface d
0.5 μm with a radiation
modulation depth of at least 20 dBel. The focus
point was moved continuously or discretely to a
given step with an accuracy of no worse than 0.1
μm. Instead of the linear displacement motor along
the y coordinate, it was possible to use an aerostatic
spindle for rotating the substrate with the film at a
constant angular velocity from 2 to 30 revolutions
per second with an angular velocity instability of no
worse than 10-5. Such a replacement allowed
forming a circular submicron structure on the
substrate.
3. Results and Discussion
When studying the characteristics of amorphous
films SiC as a protective coating, we compared
these films with SiO2 and SiO films. Our
measurements showed that Tb21Fe79 films without a
protective coating oxidize very quickly when they
are transferred from a vacuum chamber to air.
Within ten minutes, not only the coercive force of
the film changes significantly, but also the magneto-
optical readout signal drops to zero. In Tb21Fe79
films with a protective coating with a thickness of
h=50-100 nm, the coercive force almost does not
change at room temperature for several tens of
hours. Fig. 2 presents the results of changes in the
coercive force of two-layer films SiC/Tb21Fe79,
SiO2/Tb21Fe79 and SiO/Tb21Fe79 with a protective
coating with a thickness of h=60 nm on a fused
quartz substrate during their prolonged heating at
different temperatures. The measurement results
show that amorphous SiC films provide more
effective protection of TbFe films from oxidation
International Journal of Chemical Engineering and Materials
DOI: 10.37394/232031.2024.3.7
Krupa M. M.
E-ISSN: 2945-0519
56
Volume 3, 2024
0 5 10 15 20
0,4
0,5
0,6
0,7
0,8
0,9
1,0
Ht/H1
4
3
1
t, hoyr
2
compared to SiO2 films. SiO films weakly protect
TbFe films from oxidation, which may be due to the
migration of oxygen atoms through this film.
Processing the results of the time and temperature
dependences of the coercive force of the
SiC/Tb21Fe79 film shows that the protective coating
with an amorphous SiC film significantly increases
the degradation time of the Tb21Fe79 film. At T=200
C, the value of
H becomes greater than 2 years,
which confirms the high technical performance of
the protective coating based on the amorphous
silicon carbide film.
Fig. 2. Change in coercive force of Tb21Fe79 films
after heating at different temperatures: 1
SiC/Tb21Fe79 film, T=800 C; 2 SiC/Tb21Fe79 film,
T=1600 C; 3 SiO2/Tb21Fe79 film, T=1600 C; 4
SiO/Tb21Fe79 film, T=800 C.
Studies of the process of forming a submicron
structure in amorphous SiC films by powerful laser
radiation showed that the above-described setup
scheme allows you to obtain a regular submicron
structure on the surface of large-area optical parts.
The results of the obtained submicron structure will
also depend on the thickness and thermophysical
parameters of the film and substrate material and on
the intensity and duration of the laser pulse [4].
Moreover, these dependencies can be nonlinear,
which is due to the dependence of the absorption
capacity and thermophysical characteristics of the
amorphous SiC film on temperature. It is quite
difficult to take into account the influence of all
these factors, however, the experimental selection of
the film cutting modes by laser radiation with a
nonlinear dependence of absorption allows us to
obtain the value of the minimum size of the formed
structure r0 is several times smaller than the
diameter of the focused laser beam. The minimum
size is the size of the focused laser beam d0 and is
given by the microlens aperture NA=0,62 and the
light wavelength
=488 nm, which gives d0
500
nm.
A necessary condition for the formation of a
submicron structure in a SiC film is that the
intensity of the laser beam radiation I0 in the center
must give a film heating temperature in the center of
the beam T(r0) greater than the film sublimation
temperature
s
T
. To estimate the minimum intensity
I0, the following formula can be used [5]
, (2)
where
01
/s
S hI T

,
i
is the laser pulse duration,
and
are the ratio of thermal diffusivity to thermal
conductivity for the film material and optical
substrate,
, h and
are the dielectric constant,
thickness and thermal conductivity coefficient of the
film. In the continuous mode of movement of the
laser beam focusing point, the duration of the laser
pulse can be replaced by the time of passage of the
focusing point of the transverse size of the focused
beam d0.
The results of experimental studies have shown
that the width of the evaporation line of the SiC film
depends on its thickness. With a film thickness of
h0=20 nm. a line with a width of d0=0.1 μm can be
obtained (Fig. 3).
Fig. 3. Photographs, profilogram and phase
contrast pattern in tracks formed in amorphous SiC
films of different thicknesses by an argon laser: 1
h=20 nm, 2 h=60 nm, 3 h=100 nm, 4 h=40
nm.
In thinner films, the line width during laser
cutting can be even smaller, but the phase contrast
of the picture decreases. In thicker films, the depth
of the cut in the film increases, which leads to an
International Journal of Chemical Engineering and Materials
DOI: 10.37394/232031.2024.3.7
Krupa M. M.
E-ISSN: 2945-0519
57
Volume 3, 2024
increase in phase contrast, but at the same time the
transverse size of the cut line increases. With an
increase in the intensity of laser radiation, the width
of the cutting line increases and the destruction of
the optical substrate may occur. The phase contrast
pattern of the marked glass optical substrate in Fig.
3, measured on a special microscope from the air
side. It is clear that when measuring from the side of
the optical substrate, the phase contrast would
increase by two and a half times due to the large
value of the refractive index of the silicon carbide
film.
4. Conclusion
Our studies have shown that the vacuum sputtering
method of specially manufactured silicon carbide
targets enriched with silicon allows us to obtain
high-quality amorphous silicon carbide films. Such
films not only have high mechanical, thermal and
chemical stability and good thermal conductivity,
but are also transparent in a wide range of the
visible spectrum and have a large refractive index.
In addition, SiC films sublimate at high
temperatures, bypassing the melt stage, which
makes them a promising material in laser surface
treatment technology. All this allows us to state that
amorphous carbide films are a good material for
protective and optical coatings, on the basis of
which it is possible to manufacture optical elements
with a submicron structure on the surface. It should
be noted that this technology for forming a
submicron structure allows for direct control during
the manufacturing process.
The results of our studies of the protective
characteristics of amorphous SiC films showed that
they provide more effective protection of TbFe
films from oxidation compared to SiO2 films. Using
a special stand that provided submicron precision
movement of a sharply focused laser beam along
two coordinates, a regular submicron structure with
a minimum size of an individual element of several
hundred nanometers was formed in amorphous SiC
films.
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[4] W. W. Duley. Laser Processing and
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International Journal of Chemical Engineering and Materials
DOI: 10.37394/232031.2024.3.7
Krupa M. M.
E-ISSN: 2945-0519
58
Volume 3, 2024
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The author contributed in the present research, at all
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Conflict of Interest
The author has no conflict of interest to declare that
is relevant to the content of this article.
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